Material Characterization

FESEM With E-Beam Lithography System
Stylus Based Profiler
Microscope

FESEM With E-Beam Lithography System

NAME OF INSTRUMENT: FESEM WITH E-BEAM LITHOGRAPHY SYSTEM

COMPANY: M/S FEI COMPANY OF USA (S.E.A.) PTE. LTD.

MODEL NUMBER: APREO 2 S HiVac

Imaging:High-resolution imagining and analysis of nano-scale research, semiconductor characterization, biological samples, and material science (morphology, film thickness,)

E-beam Lithography:Fabrication of nanometre-scale structures with high resolution and accuracy.

Specifications

Parameter	Technical Specification
Resolution	0.9 nm at 1 kV 0.8 nm at 1 kV (beam decel.) 1.0 nm at 1 kV, 10 mm working distance (beam decel.) 0.8 nm at 500 V (beam decel.) 1.2 nm at 200 V (beam decel.)
Accelerating Voltage	200 V – 30 kV Biological samples HV = (1 – 10) kV Metal samples HV = (1 – 30) kV
Beam Current / Spot Size	100 pA at 30 kV High Vacuum / Low Vacuum: 5 – 6
Scan Rate	High Vacuum: fast scan (dwell time 0.1 – 0.3 µs) Low Vacuum: slow scan (dwell time about 3 µs)

Stylus Based Profiler

NAME OF INSTRUMENT: STYLUS BASED SURFACE PROFILER

COMPANY: BRUKER SINGAPORE PVT. LTD.

MODEL: DEKTAK –XT

APPLICATIONS: Surface Characterization, Film Thickness, Step heights, Trench depth, Surface roughness.

Specifications

Specifications	Details
Measurement Type	Stylus Contact Profilometry
Measurement Capability	Two-dimensional surface profile measurements
Stylus Force	1 to 15 mg
Stylus Tip Diameter	12.5 µm
Sample X/Y Stage	Manual 100 mm (4 in.) X/Y, manual levelling
Software	Vision 64 Operation and Analysis Software
Scan Length Range	55 mm (2 in.)
Data Points Per Scan	120,000 maximum
Max. Sample Thickness	50 mm (1.95 in.)
Max. Wafer Size	200 mm (8 in.)
Step Height Repeatability	< 5 Å, 1 sigma on 0.1 µm step
Vertical Range	1 mm (0.039 in.)
Vertical Resolution	1 Å max (@ 6.55 µm range)

Microscope

NAME OF INSTRUMENT: INVERTED METALLURGICAL MICROSCOPE WITH LAPTOP

COMPANY: RADICAL SCIENTIFIC EQUIPMENTS PVT. LTD.

Specifications