Deposition Tools
- E-Beam Evaporation System
 - Thermal Evaporation System
 - R-F Sputter System
 - Horizontal Three Stack (Oxygen Diffusion & Annealing) Furnace System
 - Spin Coater
 
E-Beam Evaporation System
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NAME OF INSTRUMENT: PHYSICAL VAPOR DEPOSITION SYSTEM (E-BEAM)
COMPANY: EXCEL INSTRUMENTS
APPLICATIONS: Deposition of high-quality thin films of different materials (metal, metal-oxides, and other semiconductor materials)
Specifications
| Parameter | Technical Specification | 
|---|---|
| Substrate holder: | 2”, 3” and 4” wafers and with provision of heating and rotation | 
| Temperature range | RT to 500 °C. | 
| Crucible holder | 6 Pockets | 
| Thermal evaporator electrodes | Heating elements: Filaments and Boats | 
| Electron Beam Source: | Electron Beam Power Supply, 6kW, 400V, 50Hz 3 Phase, Voltage Adjustable from -6kV to 8kV Maximum Current is 750mA., Programmable sweep with 5 to 8 preinstalled shapes.  | 
								  
| Quartz crystal monitor | Thickness accuracy = ± 0.01 nm | 
Thermal Evaporation System
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NAME OF INSTRUMENT: THERMAL EVAPORATION SYSTEM
COMPANY: EXCEL INSTRUMENT (INDIA)
APPLICATIONS: Deposition of high-quality thin films of different materials (metal, insulators, and dielectrics) with in-situ thickness control
Specifications
| Parameter | Technical Specification | 
|---|---|
| Substrate holder: | 2”, 3” and 4” wafers and with provision of heating and rotation | 
| Temperature range | RT to 400 °C. | 
| Thermal evaporator electrodes | Heating elements: Filaments and Boats | 
| Electron Beam Source: | Electron Beam Power Supply, 6kW, 400V, 50Hz 3 Phase, Voltage Adjustable from -6kV to 8kV Maximum Current is 750mA., Programmable sweep with 5 to 8 preinstalled shapes.  | 
								  
| Quartz crystal monitor | Thickness accuracy = ± 0.01 nm | 
R-F Sputter System
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NAME OF INSTRUMENT: RF SPUTTERING SYSTEM
COMPANY: EXCEL INSTRUMENT (INDIA)
APPLICATIONS: Deposition of high-quality thin films of different materials (metal, metal-oxides, and other semiconductor materials) in high vacuum.
Specifications
| Specifications | Details | 
|---|---|
| Manufacture | EXCEL INSTRUMENTS® | 
| Purpose: | Deposition of metal/dielectric layers on 4” wafer | 
| Power | 0 - 600 W | 
| Substrate temperature | RT – 700 °C | 
| Substrate holder | 2”/3”/4” | 
| Sputtering Type | Single, Co and Multi | 
| Target Type | 2”/4” | 
| S.No. | Available Materials | 
|---|---|
| 1 | Aluminium (Al) | 
| 2 | Copper (Cu) | 
| 3 | Chromium (Cr) | 
| 4 | Titanium (Ti) | 
| 5 | Nikel (Ni) | 
| 6 | Zinc (Zn) | 
| 7 | Silicon Dioxide (Sio2) | 
| 8 | Silicon Nitride (SiN4) | 
| 9 | Hafnium Oxide (Hfo2) | 
Horizontal Three Stack Furnace System
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NAME OF INSTRUMENT: HORIZONAL THREE STACK (OXIDATION, DIFFUSION AND ANNEALING) FURNACE SYSTEM
COMPANY: SVCS PROCESS INNOVATION (Czech Republic)
APPLICATIONS: Horizontal three-stack tube furnace for processing of wafers (2” & 4” diameter)
- For dry and wet oxidation
 - P-type diffusion in 50mm and 100mm diameter silicon wafers
 - N-type diffusion in 50mm and 100mm diameter silicon wafers
 
Specifications
| Parameter | Technical Specification | 
|---|---|
| Substrate holder: | 2”, 3”, 4” and 6” wafers | 
| Temperature range | RT to 1500 °C. | 
| Wafer quantity | 1 lot (25 wafers) | 
| Thermal processing | Oxidation, Doping, Annealing | 
| Oxidation type | Wet/Dry | 
| Doping | p/n-type Solid dopant sources (POCl3, BBr3) | 
Spin Coater
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