Deposition Tools
- E-Beam Evaporation System
- Thermal Evaporation System
- R-F Sputter System
- Horizontal Three Stack (Oxygen Diffusion & Annealing) Furnace System
- Spin Coater
E-Beam Evaporation System
NAME OF INSTRUMENT: PHYSICAL VAPOR DEPOSITION SYSTEM (E-BEAM)
COMPANY: EXCEL INSTRUMENTS
APPLICATIONS: Deposition of high-quality thin films of different materials (metal, metal-oxides and other semiconductor materials)
Specifications
| Parameter | Technical Specification |
|---|---|
| Substrate holder: | 2”, 3” and 4” wafers and with provision of heating and rotation |
| Temperature range | RT to 500 °C. |
| Crucible holder | 6 Pockets |
| Thermal evaporator electrodes | Heating elements: Filaments and Boats |
| Electron Beam Source: | Electron Beam Power Supply, 6kW, 400V, 50Hz 3 Phase, Voltage Adjustable from -6kV to 8kV Maximum Current is 750mA., Programmable sweep with 5 to 8 preinstalled shapes. |
| Quartz crystal monitor | Thickness accuracy = ± 0.01 nm |
Thermal Evaporation System
NAME OF INSTRUMENT: THERMAL EVAPORATION SYSTEM
COMPANY: EXCEL INSTRUMENT (INDIA)
APPLICATIONS: Deposition of high-quality thin films of different materials (metal, insulators and dielectrics) with in-situ thickness control
Specifications
| Parameter | Technical Specification |
|---|---|
| Substrate holder: | 2”, 3” and 4” wafers and with provision of heating and rotation |
| Temperature range | RT to 400 °C. |
| Thermal evaporator electrodes | Heating elements: Filaments and Boats |
| Electron Beam Source: | Electron Beam Power Supply, 6kW, 400V, 50Hz 3 Phase, Voltage Adjustable from -6kV to 8kV Maximum Current is 750mA., Programmable sweep with 5 to 8 preinstalled shapes. |
| Quartz crystal monitor | Thickness accuracy = ± 0.01 nm |
R-F Sputter System
NAME OF INSTRUMENT: RF SPUTTERING SYSTEM
COMPANY: EXCEL INSTRUMENT (INDIA)
APPLICATIONS: Deposition of high-quality thin films of different materials (metal, metal-oxides and other semiconductor materials) in high vacuum.
Specifications
| Specifications | Details |
|---|---|
| Manufacture | EXCEL INSTRUMENTS® |
| Purpose: | Deposition of metal/dielectric layers on 4” wafer |
| Power | 0 - 600 W |
| Substrate temperature | RT – 700 °C |
| Substrate holder | 2”/3”/4” |
| Sputtering Type | Single, Co and Multi |
| Target Type | 2”/4” |
| S.No. | Available Materials |
|---|---|
| 1 | Aluminium (Al) |
| 2 | Copper (Cu) |
| 3 | Chromium (Cr) |
| 4 | Titanium (Ti) |
| 5 | Nikel (Ni) |
| 6 | Zinc (Zn) |
| 7 | Silicon Dioxide (Sio2) |
| 8 | Silicon Nitride (SiN4) |
| 9 | Hafnium Oxide (Hfo2) |
Horizontal Three Stack (Oxygen Diffusion & Annealing) Furnace System
NAME OF INSTRUMENT: HORIZONATL THREE STACK (OXIDATION, DIFFUSION AND ANNEALING) FURNACE SYSTEM
COMPANY: SVCS PROCESS INNOVATION (Czech Republic)
APPLICATIONS: Horizontal three stack tube furnace for processing of wafers (2” & 4” diameter)
- For dry and wet oxidation
- P-type diffusion in 50mm and 100mm diameter silicon wafers
- N-type diffusion in 50mm and 100mm diameter silicon wafers
Specifications
| Parameter | Technical Specification |
|---|---|
| Substrate holder: | 2”, 3”, 4” and 6” wafers |
| Temperature range | RT to 1500 °C. |
| Wafer quantity | 1 lot (25 wafers) |
| Thermal processing | Oxidation, Doping, Annealing |
| Oxidation type | Wet/Dry |
| Doping | p/n-type Solid dopant sources (POCl3, BBr3) |
Spin Coater
Upcoming
