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Lecture on “Direct nanoimprinting of semiconducting oxides – A universal approach” , 4 March 2016

A lecture entitled “Direct nanoimprinting of semiconducting oxides – A universal approach” was delivered by Dr. Ramakrishnan Ganesan, Department of Chemistry, Birla Institute of Technology & Science, Pilani–Hyderabad Campus, Andhra Pradesh on 4th March, 2016, organized by Department of chemistry, IITJ.
 
Title of Seminar:
"Direct nanoimprinting of semiconducting oxides – A universal approach" by Dr. Ramakrishnan Ganesan

Abstract

Thermal nanoimprinting of semiconducting oxides is typically performed by the sol–gel method. This method offers resists with long shelf life; however, the quality of imprinting is compromised due to high surface energy and substantial amount of solvent content in the resists. On the other hand, ultraviolet (UV) nanoimprinting of oxides has been demonstrated by using photolabile metal oxide precursors. This approach requires long time UV irradiation and limited to only a few oxides. Our work was focusing on developing new type of sol-gel resists that possess long shelf-life and offer excellent imprintability. To achieve this, we formulated polymerizable metal-containing resists that contain methacrylate-groups, which undergo in situ free radical polymerization to yield high quality imprints over a large area (1 cm × 2 cm in our work). These stable polymerizable metal-containing resists could be used in thermal as well as UV nanoimprinting techniques. Using such polymerizable resists, we were able to demonstrate successful thermal nanoimprinting of a host of oxides such as Al2O3, Ga2O3, TiO2, SnO2, Nb2O5, Ta2O5, In2O3, Y2O3, ZrO2, GeO2, HfO2, V2O5, B2O3, and WO3.

 

 
 
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