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| A new tetranuclear organotin sulfide cage [(RSnIV)4(μ-S)6]·2CHCl3·4H2O is designed and synthesized by exploiting intramolecular coordination using 2-phenylazophenyl (N → Sn) as an organic substituent on tin. Resistive Molecular Memory Device is fabricated for the very first time using Organotin based complex with the ON/OFF ratio of 103. DFT studies suggested that 2-phenylazophenyl ligand present in the complex has a crucial role in depicting the phenomenon. Also, RAM and ROM behaviour is studied for more than 10000s and the device is found to be stable and consistent. | |
| More about the article can be found here | |
| Mishra, A.; Betal, A.; Pal, N.; Kumar, R.; Lama, P.; Sahu, S.; Metre, R. K. Molecular Memory Switching Device Based on a Tetranuclear Organotin Sulfide Cage [(RSnIV)4(μ-S)6]·2CHCl3·4H2O (R = 2-(Phenylazo)phenyl): Synthesis, Structure, DFT Studies, and Memristive Behavior ACS Appl. Electron. Mater. 2020, 2(1), 220-229. https://doi.org/10.1021/acsaelm.9b00703. | |
