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Mahesh Kumar
Associate Professor

B.Sc. (2000, University of Rajasthan), Physics, Chemistry, Mathematics
M.Tech. (2005, IIT Delhi), Solid State Materials
M.Sc. (2003, University of Rajasthan), Physics
Ph.D. (2012, Indian Institute of Science, Bangalore), Engineering (Microelectronics)


IIT Jodhpur
NH 65 Nagaur Road
Karwar 342 037
Jodhpur District
(91 291) 280 1357
mkumar@iitj.ac.in
http://home.iitj.ac.in/~mkumar/


Research Areas
  1. Device Technology
  2. Electronic Materials
  3. Micro and Nano device fabrications
  4. Group III-V quantum structures by MBE
  5. Growth of thin films and nanostructures of wide bandgap semiconductors
  6. High-k dielectrics and new chemical materials like graphene III-V
  7. Si and wide band gap semiconductors for MEMS
  8. MOS-HEMT Devices
  9. 2D Materials

      1. Selected Recent Publications
        1. Surendra Singh Barala, Jitendra Singh, Mohit Kumar, Mahesh Kumar, High Tolerance of BST Thin Film Based Varactor Under Neutron Irradiation, IEEE Transactions on Electron Devices, Vol. 3677, pp 63, 2016 , IEEE
        2. AV Agrawal, R Kumar, S Venkatesan, A Zakhidov, Z Zhu, Jiming Bao, Mahesh Kumar, Mukesh Kumar, Fast detection and low power hydrogen sensor using edge-oriented vertically aligned 3-D network of MoS2 flakes at room temperature, Applied Physics Letters, Vol. 093102, pp 111, 2017 , AIP
        3. Rahul Kumar, Neeraj Goel, Mahesh Kumar, UV-Activated MoS2 Based Fast and Reversible NO2 Sensor at Room Temperature, ACS Sensors, Vol. 1744, pp 2, 2017 , ACS
        4. Rahul Kumar, Neeraj Goel, Monu Mishra, Govind Gupta, Mattia Fanetti, Matjaz Valant, Mahesh Kumar, Growth of MoS2–MoO3 Hybrid Microflowers via Controlled Vapor Transport Process for Efficient Gas Sensing at Room Temperature, Advanced Materials Interfaces, Vol. In press, 2018 , Wiley
        5. Rahul Kumar, Neeraj Goel, Mahesh Kumar, High performance NO2 sensor using MoS2 nanowires network, Applied Physics Letters, Vol. 112, pp 053502, 2018 , AIP
        6. Vijendra Singh Bhati, Sapana Ranwa, Mattia Fanetti, Matjaz Valant, Mahesh Kumar, Efficient hydrogen sensor based on Ni-doped ZnO nanostructures by RF sputtering, Sensors and Actuators B: Chemical, Vol. 588, pp 255, 2018 , Elsevier
        7. Vijendra Singh Bhati, Sapana Ranwa, Saravanan Rajamani, Kusum Kumari, Ramesh Raliya, Pratim Biswas, Mahesh Kumar, Improved Sensitivity with Low Limit of Detection of a Hydrogen Gas Sensor Based on rGO-Loaded Ni-Doped ZnO Nanostructures, ACS applied materials & interfaces, Vol. 11116, pp 10, 2018 , ACS
        8. Abhay V Agrawal, Rahul Kumar, Swaminathan Venkatesan, Alex Zakhidov, Guang Yang, Jiming Bao, Mahesh Kumar, Mukesh Kumar, Photoactivated Mixed In-Plane and Edge-Enriched p-Type MoS2 Flake-Based NO2 Sensor Working at Room Temperature, ACS sensors, Vol. 998, pp 3, 2018 , ACS
        9. Kanika Arora, Neeraj Goel, Mahesh Kumar, Mukesh Kumar, Ultra-high-performance of Self-Powered β-Ga2O3 Thin Film Solar-blind Photodetector Grown on Cost-Effective Si Substrate using High-Temperature Seed Layer, ACS Photonics, Vol. In press, 2018 , ACS
        10. Saravanan Rajamani, Kanika Arora, Anton Konakov, Alexey Belov, Dmitry Korolev, Alyona Nikolskaya, Alexey Mikhaylov, Sergey Surodin, Ruslan Kryukov, Dmitry Nikolitchev, Artem Sushkov, Dmitry Pavlov, David Tetelbaum, Mukesh Kumar, Mahesh Kumar, Deep UV narrow-band photodetector based on ion beam synthesized indium oxide quantum dots in Al2O3 matrix, Nanotechnology, Vol. 305603, pp 29, 2018 , IOP
        11. Neeraj Goel, Rahul Kumar, Mirabbos Hojamberdiev, Mahesh Kumar, Enhanced Carrier Density in a MoS₂/Si Heterojunction-Based Photodetector by Inverse Auger Process, IEEE Transactions on Electron Devices, Vol. In press, 2018 , IEEE
        12. Neeraj Goel, Rahul Kumar, Monu Mishra, Govind Gupta, Mahesh Kuma, Determination of band alignment at two-dimensional MoS2/Si van der Waals heterojunction, Journal of Applied Physics, Vol. 225301, pp 123, 2018 , AIP
        13. Sapana Ranwa, Pawan Kumar Kulriya, Vivek Dixit, Mahesh Kumar, Temperature dependent electrical transport studies of self-aligned ZnO nanorods/Si heterostructures deposited by sputtering, Journal of Applied Physics, Vol. 233706, pp 115, 2014 , AIP
        14. Sapana Ranwa, Pawan K Kulriya, Vikas Kumar Sahu, LM Kukreja, Mahesh Kumar, Defect-free ZnO nanorods for low temperature hydrogen sensor applications, Applied Physics Letters, Vol. 213103, pp 105, 2014 , AIP
        15. Basanta Roul, Mahesh Kumar, Thirumaleshwara N Bhat, Mohana K Rajpalke, SB Krupanidhi, Nitesh Kumar, A Sundaresan, Observation of Room Temperature Ferromagnetism in InN Nanostructures, Journal of Nanoscience and Nanotechnology, Vol. 4426, pp 15, 2015 , American Scientific Publishers
        16. Jitendra Singh, Sapana Ranwa, Jamil Akhtar, Mahesh Kumar, Growth of residual stress-free ZnO films on SiO2/Si substrate at room temperature for MEMS devices, AIP Advances, Vol. 067140, pp 5, 2015 , AIP
        17. Sapana Ranwa, Mohit Kumar, Jitendra Singh, Mattia Fanetti, Mahesh Kumar, Schottky-contacted vertically self-aligned ZnO nanorods for hydrogen gas nanosensor applications, Journal of Applied Physics, Vol. 034509, pp 118, 2015 , AIP
        18. Surendra Singh Barala, Jitendra Singh, Sapana Ranwa, Mahesh Kumar, Radiation Induced Response of ${rm Ba} _ {0.5}{rm Sr} _ {0.5}{rm TiO} _3 $ Based Tunable Capacitors Under Gamma Irradiation, IEEE Transaction on Nuclear Science, Vol. 1873, pp 62, 2015 , IEEE
        19. Basanta Roul, Mahesh Kumar, Mohana K Rajpalke, Thirumaleshwara N Bhat, SB Krupanidhi, Binary group III-nitride based heterostructures: band offsets and transport properties, Journal of Physics D: Applied Physics, Vol. 423001, pp 48, 2015 , IOP
        20. Arjun Shetty, Mahesh Kumar, Basanta Roul, KJ Vinoy, SB Krupanidhi, InN Quantum Dot Based Infra-Red Photodetectors, Journal of Nanoscience and Nanotechnology, Vol. 709, pp 16, 2016 , American Scientific Publishers
        21. AA Konakov, DO Filatov, DS Korolev, AI Belov, AN Mikhaylov, DI Tetelbaum, Mahesh Kumar, Electronic states in spherical GaN nanocrystals embedded in various dielectric matrices: The k⋅ p-calculations, AIP Advances, Vol. 015007, pp 6, 2016 , AIP
        22. Kiran P Shejale, Devika Laishram, Mahesh S Roy, Mahesh Kumar, Rakesh K Sharma, On the study of phase and dimensionally controlled titania nanostructures synthesis at sub-zero temperatures, Materials & Design, Vol. 535, pp 92, 2016 , Elsevier
        23. Sinha, N., V. M. Jali, Bhat, T.N., Roul, B., Kumar, M., Rajpalke, M.K., Krupanidhi, S.B., Indium Nitride (InN) Nanostructures Grown by Plasma‐Assisted Molecular Beam Epitaxy (PAMBE), AIP Conf. Proc. , Vol. 1393, pp 77, 2011 , American Institute of Physics
        24. Rajpalke, M.K., Bhat, T.N., Kumar, M., Roul, B. and Krupanidhi, S.B., Growth and properties of nonpolar a-plane GaN grown on r-sapphire by plasma assisted molecular beam epitaxy, SPIE proceeding, Vol. 8549, pp 85492W, 2012 , SPIE
        25. Bhat, T.N., Rajpalke, M.K., Kumar, M., Roul, B., and Krupanidhi, S.B., Wurtzite InN nanodots on Si(100) by molecular beam epitaxy, SPIE proceeding, Vol. 8549, pp 85492G, 2012 , SPIE
        26. Bhat, T.N., Rajpalke, M.K., Kumar, M., Roul, B., and Krupanidhi, S.B., Comparative studies on photovoltaic performance of InN nanostructures/p-Si (100) heterojunction devices grown by molecular beam epitaxy, Mater. Res. Soc. Symp. Proc., Vol. 1391, pp 1-6, 2012 , Materials Research Socity
        27. Rajpalke, M.K., Bhat, T.N., Roul, B., Kumar, M. and Krupanidhi, S.B., Molecular Beam Epitaxial Growth of Nonpolar a-plane InN/ GaN Heterostructures, Mater. Res. Soc. Symp. Proc., Vol. 1396, pp 1-6, 2012 , Materials Research Socity
        28. Rajpalke, M.K., Bhat, T.N., Roul, B., Kumar, M., P. Misra, L. M. Kukreja, Sinha, N. and Krupanidhi, S.B., Growth temperature induced effects in nonpolar a-plane GaN on r-plane sapphire substrate by RF-MBE, Journal of crystal growth, Vol. 314, pp 5, 2011 , Elsevier
        29. Kumar, M., Rajpalke, M.K., Roul, B., Bhat, T.N., Dash, S.,Tyagi, A.K., Kalghatgi, A.T., and Krupanidhi, S.B., Reduction of oxygen impurity at GaN/beta-Si3N4/Si interface via SiO2 to Ga2O conversion by exposing of Si surface under Ga flux, Journal of crystal growth , Vol. 327, pp 284, 2011 , Elsevier
        30. Singh, R., Kumar, M. and Chandra, S., Growth and characterization of high resistivity c-axis oriented ZnO films on different substrates by RF magnetron sputtering for MEMS applications, Journal of Materials Science , Vol. 42, pp 4675, 2010 , Springer
        31. Roul, B., Kumar, M., Rajpalke, M.K., Bhat, T.N., Sinha, N., Kalghatgi, A.T. and Krupanidhi, S.B. , Indium nitride nanomatric-objects grown on c-sapphire by plasma-assisted molecular beam epitaxy, Nanoscience and nanotechnology letters , Vol. 2, pp 257, 2010 , American Scientific Publishers
        32. Bhat, T.N., Roul, B., Rajpalke, M.K., Kumar, M., Krupanidhi, S.B. and Sinha, N., , Temperature dependent transport behavior of n-InN nanodot/p-Si heterojunction structures, Applied Physics Letters , Vol. 97, pp 202107 , 2010 , American Institute of Physics
        33. Kumar, M., Bhat, T.N., Rajpalke, M.K., Roul, B., P. Misra, L. M. Kukreja, Sinha, N., Kalghatgi, A.T., and Krupanidhi, S.B. , Self-assembled flower-like nanostructures of InN and GaN grown by plasma-assisted molecular beam epitaxy, Bulletin of Material Science , Vol. 33, pp 221, 2010 , Springer
        34. Kumar, M., Roul, B., Bhat, T.N., Rajpalke, M.K., Sinha, N., Kalghatgi, A.T. and Krupanidhi, S.B., Droplet epitaxy of InN quantum dots on Si (111) by RF plasma- assisted Molecular Beam Epitaxy, Advanced Science Letters, Vol. 3, pp 379, 2010 , American Scientific Publishers
        35. Kumar, M., Roul, B., Bhat, T.N., Rajpalke, M.K., P. Misra, L. M. Kukreja, Sinha, N., A. T. Kalghatgi, and Krupanidhi, S.B. , Improved growth of GaN layers on ultra thin silicon nitride/Si (111) by RF-MBE, Materials Research Bulletin , Vol. 45, pp 1581, 2010 , Elsevier
        36. Bhat, T.N., Rajpalke, M.K., Kumar, M., Roul, B., Krupanidhi, S.B. , Substrate nitridation induced modulations in transport properties of wurtzite GaN/p-Si (100) heterojunctions grown by molecular beam Epitaxy, Journal of Applied Physics, Vol. 110, pp 093718, 2011 , American Institute of Physics
        37. Roul, B., Rajpalke, M.K., Bhat, T.N., Kumar, M., Kalghatgi, A.T., Krupanidhi, S.B., Kumar, N. and Sundaresan, A., Experimental evidence of Ga-vacancy induced room temperature ferromagnetic behavior in GaN films, Applied Physics Letters , Vol. 99, pp 162512, 2011 , American Institute of Physics
        38. Roul, B., Kumar, M., Rajpalke, M.K., Bhat, T.N., Sinha, N., Kalghatgi, A.T. and Krupanidhi, S.B., Effect of N/Ga flux ratio on transport behavior of Pt/GaN Schottky diodes, Journal of Applied Physics, Vol. 110, pp 064502, 2011 , American Institute of Physics
        39. Roul, B., Bhat, T.N., Kumar, M., Rajpalke, M.K., Sinha, N., Kalghatgi, A.T., and Krupanidhi, S.B., Barrier height inhomogeneities in InN/GaN heterostructure based Schottky junctions, Solid State Communications , Vol. 151, pp 1420, 2011 , Wiley
        40. Bhat, T.N., Rajpalke, M.K., Roul, B., Kumar, M., Sinha, N., and Krupanidhi, S.B., Evidence for ambient oxidation of Indium nitride quantum dots, physica status solidi (b) , Vol. 248, pp 2853, 2011 , Wiley
        41. Bhat, T.N., Kumar, M., Rajpalke, M.K., Roul, B., Sinha, N., and Krupanidhi, S.B., Band alignment of at InN/p–Si(100) heterojunction determined by x-ray photoelectron spectroscopy, Journal of Applied Physics , Vol. 109, pp 123707, 2011 , American Institute of Physics
        42. Rajpalke, M.K. , Basanta Roul, Kumar, M., Bhat, T.N., Neeraj Sinha and Krupanidhi, S.B., Structural and optical properties of nonpolar (1 1 -2 0) a-plane GaN grown on (1 -1 0 2) r-plane sapphire substrate by plasma-assisted molecular beam epitaxy, Scripta Materialia , Vol. 65, pp 33, 2011 , Elsevier
        43. Roul, B., Rajpalke, M.K., Bhat, T.N., Kumar, M., Sinha, N., Kalghatgi, A.T. and Krupanidhi, S.B., Temperature dependent electrical transport behavior of InN/GaN heterostructure based Schottky diodes, Journal of applied Physics , Vol. 109, pp 044502, 2011 , American Institute of Physics
        44. Kumar, M., Bhat, T.N., Rajpalke, M.K., Roul, B., A. T. Kalghatgi, and Krupanidhi, S.B., Transport and infrared photoresponse properties of InN nanorods/Si heterojunction, Nanoscale Research Letters , Vol. 6, pp 609, 2011 , Springer
        45. Kumar, M., Rajpalke, M.K., Bhat, T.N., Roul, B., A. T. Kalghatgi, and Krupanidhi, S.B., Size dependent band gap of MBE grown InN quantum dots measured by scanning tunneling spectroscopy, Journal of Applied Physics, Vol. 110, pp 114317, 2011 , American Institute of Physics
        46. Kumar, M., Roul, B., Bhat, T.N., Mohana K Rajpalke, A. T. Kalghatgi, and Krupanidhi, S.B., Barrier inhomogeneity and electrical properties of InN nanodots/Si heterojunction diodes, Journal of Nanomaterials , Vol. 2011, pp 189731, 2011 , Hindawi Publishing Corporation
        47. Kumar, M., Bhat, T.N., Rajpalke, M.K., Roul, B., Sinha, N., Kalghatgi, A.T., and Krupanidhi, S.B., Study of band offsets in InN/Ge heterojunctions, Surface Science , Vol. 605, pp L33, 2011 , Elsevier
        48. Kumar, M., Rajpalke, M.K., Bhat, T.N., Roul, B., Sinha, N., Kalghatgi, A.T., and Krupanidhi, S.B., Growth of InN layers on Si (111) using ultra thin silicon nitride buffer layer by NPA-MBE, Materials Letters , Vol. 65, pp 1396, 2011 , Elsevier
        49. Kumar, M., Rajpalke, M.K., Roul, B., Bhat, T.N., P. Misra, L. M. Kukreja, Sinha, N., Kalghatgi, A.T., and Krupanidhi, S.B., Temperature dependent photoluminescence of GaN grown on β-Si3N4/Si(111) by plasma-assisted MBE , Journal of Luminescence , Vol. 131, pp 614, 2011 , Elsevier
        50. Kumar, M., Bhat, T.N., Rajpalke, M.K., Roul, B., Sinha, N., Kalghatgi, A.T. and Krupanidhi, S.B., Negative differential capacitance in n-GaN/p-Si heterojunction, Solid State Communications , Vol. 151, pp 356, 2011 , Elsevier
        51. Kumar, M., Roul, B., Bhat, T.N., Rajpalke, M.K., Sinha, N., Kalghatgi, A.T., and Krupanidhi, S.B. , Kinetics of self-assembled InN quantum dots grown on Si (111) by plasma-assisted MBE, Journal of Nanoparticle Research, Vol. 13, pp 1281, 2011 , Springer
        52. Kumar, M., Rajpalke, M.K., Roul, B., Bhat, T.N., Sinha, N., Kalghatgi, A.T., and Krupanidhi, S.B., The impact of ultra thin silicon nitride buffer layer on GaN growth on Si (111) by RF-MBE, Applied Surface Science , Vol. 257, pp 2107, 2011 , Elsevier
        53. Kumar, M., Roul, B., Arjun Shetty, Rajpalke, M.K., Bhat, T.N., Kalghatgi, A.T., and Krupanidhi, S.B., Temperature dependence of carrier transport in InN quantum dots grown by droplet epitaxy on silicon nitride/Si substrate, Applied Physics Letters, Vol. 99, pp 153114, 2011 , American Institute of Physics
        54. Rajpalke, M.K., Bhat, T.N., Roul, B., Kumar, M., and Krupanidhi, S.B. , Current transport in nonpolar a-plane InN/GaN heterostructure Schottky junction, Journal of applied Physics, Vol. 112, pp 023706, 2012 , American Institute of Physics
        55. Roul, B., Kumar, M., Rajpalke, M.K., Bhat, T.N., Kalghatgi, A.T., and Krupanidhi, S.B. , Effect of carrier concentration of InN on the transport behavior of InN/GaN heterostructure based Schottky junctions, Solid State Communications, Vol. 152, pp 1171, 2012 , Elsevier
        56. Roul, B., Rajpalke, M.K., Bhat, T.N., Kumar, M., Kalghatgi, A.T., and Krupanidhi, S.B., Influence of GaN underlayer thickness on structural, electrical and optical properties of InN films grown by PAMBE, Journal of crystal growth, Vol. 354, pp 208, 2012 , Elsevier
        57. Roul, B., Bhat, T.N., Kumar, M., Rajpalke, M.K., Kalghatgi, A.T., and Krupanidhi, S.B., Analysis of the temperature-dependent current–voltage characteristics and the barrier-height inhomogeneities of Au/GaN Schottky diodes, Physica Status Solid (a), Vol. 209, pp 1575, 2012 , Wiley
        58. Kumar, M., Roul, B., Bhat, T.N., Rajpalke, M.K., Kalghatgi, A.T., and Krupanidhi, S.B., Carrier transport studies of III-nitride/Si3N4/Si isotype heterojunctions, Physica Status Solid (a), Vol. 209, pp 994, 2012 , Wiley
        59. Kumar, M., Roul, B., Bhat, T.N., Rajpalke, M.K., Kalghatgi, A.T., and Krupanidhi, S.B., Valence band offset at GaN/β-Si3N4 and β-Si3N4/Si(111) heterojunctions formed by plasma-assisted molecular beam epitaxy, Thin Solid Films , Vol. 520, pp 4219, 2012 , Elsevier
        60. Kumar, M., Roul, B., Bhat, T.N., Rajpalke, M.K., Kalghatgi, A.T. and Krupanidhi, S.B., Band-structure lineup at In0.2Ga0.8N/Si heterostructures by x-ray photoelectron spectroscopy, Japanese Journal of Applied Physics, Vol. 51, pp 020203, 2012 , Japan Society of Applied Physics
        61. Kumar, M., Rajpalke, M.K., Roul, B., Bhat, T.N., Kalghatgi, A.T., and Krupanidhi, S.B., Determination of MBE grown wurtzite GaN/Ge3N4/Ge heterojunctions band offset by X-ray photoelectron spectroscopy, Physica status solidi (b) , Vol. 249, pp 58, 2012 , Wiley
        62. Kumar, M., Bhat, T.N., Roul, B., Rajpalke, M.K., Kalghatgi, A.T., and Krupanidhi, S.B., Carrier concentration dependence of donor activation energy in n-type GaN epilayers grown on Si (111) by plasma-assisted MBE , Materials Research Bulletin , Vol. 47, pp 1306, 2012 , Elsevier
        63. Kumar, M., Bhat, T.N., Rajpalke, M.K., Roul, B., Kalghatgi, A.T., and Krupanidhi, S.B., Indium flux, growth temperature and RF power induced effects in InN layers grown on GaN/Si substrate by plasma-assisted MBE, Journal of Alloys and Compounds , Vol. 512, pp 6, 2012 , Elsevier
        64. Kumar, M., Roul, B., Bhat, T.N., Rajpalke, M.K., and Krupanidhi, S.B., Structural characterization and ultraviolet photoresponse of MBE- grown GaN nanodots, Applied Physics Express , Vol. 5, pp 085202, 2012 , Japan Society of Applied Physics
        65. Rajpalke, M.K., Kumar, M., Roul, B., Bhat, T.N., and Krupanidhi, S.B., Molecular beam epitaxial growth of (1 1 -2 2) GaN on m-plane sapphire, Physica Status Solidi (c), Vol. 10, pp 381, 2013 , Wiley
        66. Kumar, M., Roul, B., Bhat, T.N., Rajpalke, M.K., and Krupanidhi, S.B., Substrates impact on growth of InN nanostructures by droplet epitaxy, Physica Status Solidi (c) , Vol. 10, pp 409, 2013 , Wiley
        67. Bhat, T.N., Roul, B., Rajpalke, M.K., Kumar, M., and Krupanidhi, S.B., Spectroscopic studies of In2O3 nanostructures; photovoltaic demonstration of In2O3/p-Si heterojunction, Journal of Nanoscience and Nanotechnology, Vol. 13, pp 498, 2013 , American Scientific Publishers
        68. Kumar, M., Roul, B., Rajpalke, M.K., Bhat, T.N., Kalghatgi, A.T. and Krupanidhi, S.B., Electrical transport studies of MBE grown InGaN/Si isotype heterojunctions, Current Applied Physics, Vol. 13, pp 26, 2013 , Elsevier
        69. Kumar, M., Roul, B., Bhat, T.N., Rajpalke, M.K., and Krupanidhi, S.B., Study of InN nanorods growth mechanism using ultrathin Au layer by plasma-assisted MBE on Si(111), Applied Nanoscience, Vol. 4, pp 121, 2014 , Springer
        70. Bhat, T.N., Rajpalke, M.K., Roul, B., Kumar, M. and Krupanidhi, S.B., Impact of substrate nitridation on the photoluminescence and photovoltaic characteristics of GaN on p-Si(100)by molecular beam epitaxy, Journal of Materials Science: Materials in Electronics, Vol. 24, pp 3371, 2013 , Springer